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| SMD Type Silicon NPN Epitaxial 2SC3325 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). High voltage: VCEO = 50 V (min). Small package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 500 50 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance * classification O: 25 (min), Y: 40 (min). Symbol ICBO IEBO hFE (1) Testconditons VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 1 V, IC = 100 mA 70 25 0.1 0.8 300 7 0.25 1 V V MHz pF Min Typ Max 0.1 0.1 240 Unit iA iA hFE (2) * VCE = 6 V, IC = 400 mA VCE (sat) IC = 100 mA, IB = 10 mA VBE fT Cob VCE = 1 V, IC = 100 mA VCE = 6 V, IC = 20 mA VCB = 6 V, IE = 0, f = 1 MHz hFE Classification Marking Rank hFE O 70 140 CE Y 120 240 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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